|
PS # -PART-YEAR |
REVISION |
AMENDMENT |
SUBJECT |
STATUS |
|---|---|---|---|---|
| 2343-5-1997 | -- | -- | Stabilized power supplies, d.c. output- Part 5: Measuremement of the magentic component of the reactor near field. | Active |
| 2344-1-1989 | -- | -- | Analogue signals for process control systems.Part 1: Direct current signals. | Active |
| 2344-2-1989 | -- | -- | Analogue signals for process control systems.Part 2: Direct voltage signals. | Active |
| 2345-1-1992 | -- | -- | Semiconductor devices. Discrete devices. Part 1: General. | Active |
| 2345-2-1998 | -- | -- | Semiconductor devices. Discrete devices. Part 2: Rectifier diodes. | Active |
| 2345-2-1-1999 | -- | -- | Semiconductor devices. Discrete devices. Part 2: Rectifier diodes. | Active |
| 2345-2-2-1998 | -- | -- | Semiconductor devices – Discrete devices. Part 2: Rectifier diodes. | Active |
| 2345-3-1999 | -- | -- | Semiconductor devices – Discrete devices. Part 2: Rectifier diodes. | Active |
| 2345-3-1-1990 | -- | -- | Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes: Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes. | Active |
| 2345-3-2-1990 | -- | -- | Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes: Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference di | Active |
| 2345-4-1998 | -- | -- | Semiconductor devices- Discrete devices. Part 4: Microwave diodes and transistors. | Active |
| 2345-5-1989 | -- | -- | Semiconductor devices. Discrete devices. Part 5: Optoelectronic devices. | Active |
| 2345-6-1997 | -- | -- | Semiconductor devices. Discrete devices. Part 6: Thyristors. | Active |
| 2345-6-1-1997 | -- | -- | Semiconductor devices. Discrete devices- Part 6: Thyristors- Section One: Blank detail specification for reverse blocking triode thyristors, ambient and case-rated up to 100 A. | Active |
| 2345-6-3-1998 | -- | -- | Semiconductor devices- Discrete devices. Part 6: Thyristors. Section Three: Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A. | Active |
| 2345-7-1998 | -- | -- | Semiconductor devices- Discrete devices. Part 7: Bipolar transistors. | Active |
| 2345-7-1-1998 | -- | -- | Semiconductor devices- Discrete devices. Part 7: Bipolar transistors. Section One: Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification. | Active |
| 2345-7-2-1998 | -- | -- | Semiconductor devices- Discrete devices. Part 7: Bipolar transistors- Section Two: Blank detail specification for case-rated bipolar transistors for low-frequency amplification. | Active |
| 2345-7-3-1998 | -- | -- | Semiconductor devices- Discrete devices. Part 7: Bipolar transistors- Section Three: Blank detail specification for bipolar transistors for switching applications. | Active |
| 2345-7-4-1998 | -- | -- | Semiconductor devices- Discrete devices. Part 7: Bipolar transistors- Section Four: Blank detail specification for case-rated bipolar transistors for high-frequency amplification. | Active |